Full-color light-emitting diodes from ZnCdMgSe/ZnCdSe quantum well structures grown on InP substrates

نویسندگان

  • M. C. Tamargo
  • W. Lin
  • S. P. Guo
  • Y. Guo
  • Y. Luo
  • Y. C. Chen
چکیده

We have grown p-type ZnCdMgSe quaternary layers and have fabricated light-emitting diodes (LEDs) from pseudomorphic quantum well (QW) structures of ZnCdSe/ZnCdMgSe grown on InP substrates that emit throughout the visible range. Nearly identical structures, di!ering only in the ZnCdSe QW layer thickness and/or composition can produce light ranging from blue to red. Good current}voltage characteristics are obtained from the diodes using p#ZnSeTe lattice matched to InP as the p-type contact layer. These structures have potential applications as integrated full-color display elements. ( 2000 Elsevier Science B.V. All rights reserved. PACS: 42.55.Px; 72.80.Ey; 73.40.Lq; 78.60.Fi; 81.15.Hi

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Patterned three-color ZnCdSeÕZnCdMgSe quantum-well structures for integrated full-color and white light emitters

We report the growth and characterization of patterned ZnCdSe/ZnCdMgSe quantum-well ~QW! structures grown adjacent to each other on a single InP substrate. Each structure emits at a different wavelength range spanning the visible range. Stripe and square-shaped QW structures of different emission wavelengths, with lateral dimensions between 15 and 60 mm, were deposited sequentially by shadow ma...

متن کامل

Green light emitting diodes on a-plane GaN bulk substrates

We report the development of 520–540 nm green light emitting diodes LEDs grown along the nonpolar a axis of GaN. GaInN /GaN-based quantum well structures were grown in homoepitaxy on both, a-plane bulk GaN and a-plane GaN on r-plane sapphire. LEDs on GaN show higher, virtually dislocation-free crystalline quality and three times higher light output power when compared to those on r-plane sapphi...

متن کامل

Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes

Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollu...

متن کامل

High-brightness II–VI light-emitting diodes grown by molecular-beam epitaxy on ZnSe substrates

High-brightness blue and green light-emitting diodes ~LEDs! based on II–VI double heterostructures ~DHs! have been successfully grown by molecular-beam epitaxy ~MBE! on ~100! ZnSe substrates. These LED structures consist of a 500–1000 Å thick active region of undoped blue-emitting Zn0.9Cd0.1Se/ZnSe multiple quantum wells or a green-emitting ZnTe0.1Se0.9 single quantum well sandwiched between a ...

متن کامل

Enhanced Performance of Quantum Dot-Based Light-Emitting Diodes with Gold Nanoparticle-Doped Hole Injection Layer

UNLABELLED In this paper, the performance of quantum dot-based light-emitting diodes (QLEDs) comprising ZnCdSe/ZnS core-shell QDs as an emitting layer were enhanced by employing Au-doped poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate ( PEDOT PSS) hole injection layer (HIL). By varying the concentration and dimension of Au nanoparticle (NP) dopants in PEDOT PSS, the optimal devices w...

متن کامل

ذخیره در منابع من

ذخیره در منابع من قبلا به منابع من ذحیره شده

{@ msg_add @}


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2000